Search results for "silicon nitride"
showing 10 items of 24 documents
Radiation resistance of nanolayered silicon nitride capacitors
2020
Abstract Single-layered and multi-layered 20–60 nm thick silicon nitride (Si3N4) dielectric nanofilms were fabricated using a low-pressure chemical vapour deposition (LPCVD) method. The X-ray photoelectron spectroscopy (XPS) confirmed less oxygen content in the multi-layered nanofilms. The capacitors with Si3N4 multilayer demonstrated a tendency to a higher breakdown voltage compared to the capacitors with Si3N4 single layer. Si3N4 nanofilms and capacitors with Si3N4 dielectric were exposed to 1 kGy dose of gamma photons. Fourier transform infrared (FTIR) spectroscopy analysis showed that no modifications of the chemical bonds of Si3N4 were present after irradiation. Also, gamma irradiation…
Changes in surface stress at the liquid/solid interface measured with a microcantilever
2000
Abstract The bending of microfabricated silicon nitride cantilevers was used to determine surface stress changes at solid–liquid interfaces. The radius of curvature of the bent cantilever is directly proportional to changes in the differential surface stress between its opposite sides. To demonstrate the possibilities and limitations of the technique, cantilevers coated on both sides with gold and densely packed monolayers of different thiols were put in a constant flow of aqueous electrolyte solution and the deflection was measured using a optical lever technique. Changes in the surface stress for the different thiol monolayers due to specific proton adsorption are presented. Possible appl…
Normal Metal-Insulator-Superconductor Tunnel Junctions With Pulsed Laser Deposited Titanium Nitride as Superconductor
2021
Here we report the fabrication of normal metal – insulator – superconductor (NIS) tunnel junctions using superconducting titanium nitride grown by pulsed laser deposition (PLD). The films for NIS junction fabrication were deposited on two different substrates: silicon nitride film and magnesium oxide. TiN films were characterized by means of electrical transport measurements, and films with superconducting transition temperatures above the liquid helium boiling point were chosen for fabrication of NIS junctions. Tunnel junction devices were successfully fabricated using electron beam lithography and shadow evaporation techniques. The insulator layer formation was performed using two differe…
Dispersion-optimized multicladding silicon nitride waveguides for nonlinear frequency generation from ultraviolet to mid-infrared
2016
Nonlinear frequency conversion spanning from the ultraviolet to the mid-infrared (beyond 2.4 μm) is experimentally demonstrated in multicladding silicon nitride (𝑆𝑖𝑋𝑁𝑌) waveguides. By adjusting the waveguide cross-section the chromatic dispersion is flattened, which enhances both the efficiency and the bandwidth of the nonlinear conversion. How accurately the dispersion is tailored is assessed through chromatic dispersion measurements and an experiment/simulation comparison of the dispersive waves' wavelength locations. Undesirable fluctuations of both the refractive index and the dimensions of the waveguide during the fabrication process result in a dispersion unpredictability of at l…
WEAR MECHANISM OF CERAMIC TOOLS
1993
Abstract Cutting tests were performed using ceramic cutting tools under continuous cutting conditions. The tests were carried out on AISI 1040 steel, with cutting speeds ranging from 5 to 11 m s −1 . The wear mechanism was investigated for both crater and flank. Alumina-toughened zirconia of submicron grain size showed the best wear resistance. Alumina with TiC, TiN and ZrO 2 inclusions exhibited a wear resistance a little lower than the above-mentioned materials. Low chemical stability seems to be the reason for the poor performances of the silicon carbide whiskers-reinforced alumina, silicon nitride and the tungsten carbide inserts.
Influence of Phonon dimensionality on Electron Energy Relaxation
2007
We studied experimentally the role of phonon dimensionality on electron-phonon (e-p) interaction in thin copper wires evaporated either on suspended silicon nitride membranes or on bulk substrates, at sub-Kelvin temperatures. The power emitted from electrons to phonons was measured using sensitive normal metal-insulator-superconductor (NIS) tunnel junction thermometers. Membrane thicknesses ranging from 30 nm to 750 nm were used to clearly see the onset of the effects of two-dimensional (2D) phonon system. We observed for the first time that a 2D phonon spectrum clearly changes the temperature dependence and strength of the e-p scattering rate, with the interaction becoming stronger at the …
Thermal characteristics of silicon nitride membranes at sub-Kelvin temperatures
1998
We have performed calorimetric measurements on 200 nm thin silicon nitride membranes at temperatures from 0.07 to 1 K. Besides full windows, membranes cut into a thermally isolating suspended bridge geometry were investigated. Based on dc and ac measurements employing normal-metal/insulator/superconductor (NIS) tunnel junctions both as a thermometer and a heater, we report on heat transport and thermal relaxation in silicon nitride films. The bridge structure improves thermal isolation and, consequently, energy sensitivity by two orders of magnitude over those of the full membrane with the same size, and makes such a structure very attractive for bolometric and microrefrigeration applicatio…
Interface of Silicon Nitride Nanolayers with Oxygen Deficiency
2018
Multilayer Si 3 N 4 consisting of Si 3 N 4 nanolayers with the total thickness 60 nm was deposited layer-by-layer in a low-pressure chemical vapor deposition process. Compared with the single-layer Si 3 N 4 , the multilayer Si 3 N 4 had one-third less oxygen concentration at the interfaces. This decreased density of electrically active centers of oxygen traps and improved quality of nanocapacitors with multilayer Si 3 N 4 dielectric.
Silicon nitride-based deep sub-λ slit for ultra-broadband THz coherent detection
2018
We report on the characterization of a new type of CMOS-compatible device for terahertz solid-state biased coherent detection, which relies on a 1-µm-wide metallic slit embedded in a thin film of PECVD-grown silicon nitride.
WEAR PERFORMANCE OF CERAMIC CUTTING-TOOL MATERIALS WHEN CUTTING STEEL
1991
Abstract Some test cycles have been carried out in continuous cutting conditions, employing cutting parameters (feed, depth of cut and cutting speed) chosen following experimental planes and suitable test fields. The wear tests have been carried out on AISI 1040 steel with cutting speeds from 5m/sec to 11m/sec. The silicon nitride, sintered carbide, cubic boron nitride and alumina reinforced with SiC whiskers inserts, have shown, at each assigned cutting parameter, poor wear resistance when cutting steel. Alumina and alumina in submicron grain, which has been toughened by ZrO2 phase transformation, and the oxide-based alumina, have been the better wear resistance. The mixed based alumina ha…